HPU600R1K6DN - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

📥 Download Datasheet

HPU600R1K6DN Datasheet Preview — Preview of HPU600R1K6DN PDF

Datasheet Details

Part number: HPU600R1K6DN
Manufacturer: HUAJING MICROELECTRONICS
File Size: 409.59 KB
Datasheet: HPU600R1K6DN-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

HPU600R1K6DN Product details

Description

HPU600R1K6DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Superior switching performance l Low on resistance(Rdson≤1.6 Ω) l Low gate charge (Typical Data:12.8nC) l Low reverse transfer capacitances(Typical:10.6pF) l 100% Single pulse avalanche energy test.

📁 Related Datasheet

HPU650R420PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPU650R650PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPU700R700PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPU800R750PD-G - Silicon N-Channel Power MOSFET (CR Micro)
HPU800R900PD-G - Silicon N-Channel Power MOSFET (CR Micro)

📌 All Tags

Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

HUAJING MICROELECTRONICS HPU600R1K6DN-like datasheet

HPU600R2K3DN - Silicon N-Channel Power MOSFET
HPU600R2K3DP - Silicon N-Channel Power MOSFET
HPU600R700DN - Silicon N-Channel Power MOSFET
HPU600R760MB - Silicon N-Channel Power MOSFET
HPU600R800DN - Silicon N-Channel Power MOSFET
HPU650R1K1DN - Silicon N-Channel Power MOSFET

HPU600R1K6DN Stock/Price