Datasheet4U Logo Datasheet4U.com

HSC945, HSC945_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HSC945 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No.: 1/4 HSC945 NPN EPITAXIAL PLANAR.
The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. Maximu.

HSC945 Applications

* Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 60

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HSC945, HSC945_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HSC945, HSC945_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
36.26 KB
Datasheet
HSC945_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC945, HSC945_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HSC100 - Aluminium Housed Power Resistors (TE)
  • HSC106D - Silicon Controlled Rectifier (SemiHow)
  • HSC106M - Silicon Controlled Rectifier (SemiHow)
  • HSC119 - Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
  • HSC150 - Aluminium Housed Power Resistors (TE)
  • HSC200 - Aluminium Housed Power Resistors (TE)
  • HSC226 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
  • HSC250 - Aluminium Housed Power Resistors (TE)

📌 All Tags

NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC945-like datasheet

HSC945 Stock/Price