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HSC945SP, HSC945SP_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HSC945SP Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.:HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No.: 1/4 HSC945SP NPN EPITAXIAL PL.
The HSC945 is designed for using driver stage of AF amplifier and low speed switching applications. Maximum Temper.

HSC945SP Applications

* Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipations Total Power Dissipation (Ta=25°C) 250 mW
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 60 V VCEO

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HSC945SP, HSC945SP_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC945SP, HSC945SP_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
29.24 KB
Datasheet
HSC945SP_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC945SP, HSC945SP_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC945SP-like datasheet

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