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H2N3906, H2N3906_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

H2N3906 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Pag.
The H2N3906 is designed for general purpose switching and amplifier applications. Maximum Temperatures Sto.

H2N3906 Applications

* Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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This datasheet PDF includes multiple part numbers: H2N3906, H2N3906_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N3906, H2N3906_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
51.40 KB
Datasheet
H2N3906_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N3906, H2N3906_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N3906-like datasheet