Datasheet4U Logo Datasheet4U.com

H2N4126, H2N4126_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

H2N4126 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
The H2N4126 is designed for general purpose switching and amplifier applications. Complementary to H2N4124. High Power PT.

H2N4126 Features

* Complementary to H2N4124
* High Power PT: 625mW at 25°C
* High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N4126, H2N4126_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
H2N4126, H2N4126_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
46.73 KB
Datasheet
H2N4126_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N4126, H2N4126_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • H2N60D - N-Channel MOSFET (HAOHAI)
  • H2N60F - N-Channel MOSFET (HAOHAI)
  • H2N60P - N-Channel MOSFET (HAOHAI)
  • H2N60U - N-Channel MOSFET (HAOHAI)
  • H2N7002SN - N-Channel MOSFET (HI-SINCERITY)

📌 All Tags

PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N4126-like datasheet