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HSB649T, HSB649T-Hi SILICON PNP EPITAXIAL PLANAR TRANSISTOR

HSB649T Description

HI-SINCERITY MICROELECTRONICS CORP.HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HT200103 Issued Date : 2001.12.01 Revised Date : 2005.
Low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction.

HSB649T Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

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This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSB649T, HSB649T-Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
39.99 KB
Datasheet
HSB649T-Hi-SincerityMocroelectronics.pdf
Description
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi.
Please refer to the document for exact specifications by model.

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SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSB649T-like datasheet