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HSC1815, HSC1815_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HSC1815, HSC1815_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC1815, HSC1815_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
46.23 KB
Datasheet
HSC1815_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC1815, HSC1815_Hi.
Please refer to the document for exact specifications by model.

HSC1815 Product details

Description

The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 400 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC1815-like datasheet

HSC1815 Stock/Price