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HSC2625, HSC2625_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HSC2625 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HR200201 Issued Date : 1996.03.14 Revised Date : 2002.08.13 Page No.: 1/2 HSC2625 NPN EPITAXIAL PLA.
The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications.

HSC2625 Applications

* Absolute Maximum Ratings (Ta=25°C) TO-3P
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 80 W
* Maximum Voltages and Currents VCBO Collector to Base Voltage 450

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This datasheet PDF includes multiple part numbers: HSC2625, HSC2625_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC2625, HSC2625_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
23.28 KB
Datasheet
HSC2625_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC2625, HSC2625_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC2625-like datasheet

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