HSC2625
Hi-Sincerity Mocroelectronics
23.28kb
Npn epitaxial planar transistor. The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications. Absolute Maximum Ratings (T
TAGS
📁 Related Datasheet
HSC2682 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2006.02.20 Pag.
HSC200 - Aluminium Housed Power Resistors
(TE)
Key Features
I Established product with proven reliability • Leading the way with over 50 years of design and manufacturing experience
I 5 Watts to 30.
HSC2228Y - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
HSC2228Y
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Pa.
HSC2240 - NPN EPITAXIAL PLANAR TRANSISTOR
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
HSC2240
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6529 Issued Date : 1992.12.16 Revised Date : 2005.02.15 Pag.
HSC226 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
HSC226
Silicon Schottky Barrier Diode
ADE-208-831A (Z) Rev. 1 Aug. 2000 Features
• Low reverse current, Low capacitance. • Ultra small Flat Package (.
HSC226 - Silicon Schottky Barrier Diode
(SEMTECH)
HSC226
SILICON SCHOTTKY BARRIER DIODE
Features • Low reverse current, low capacitance • Ultra small flat package is suitable for surface mount design
.
HSC226 - Silicon Schottky Barrier Diode
(Kexin)
SMD Type
Silicon Schottky Barrier Diode HSC226
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
Low reverse current, Low capacitan.
HSC226 - Silicon Schottky Barrier Diode
(Renesas)
HSC226
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0599-0300 Rev.3.00 Sep 15, 2006
Features
• Low reverse current, Low capacitance..
HSC250 - Aluminium Housed Power Resistors
(TE)
Key Features
I Established product with proven reliability • Leading the way with over 50 years of design and manufacturing experience
I 5 Watts to 30.
HSC276 - Silicon Schottky Barrier Diode for Mixer
(Hitachi Semiconductor)
HSC276
Silicon Schottky Barrier Diode for Mixer
ADE-208-421A(Z) Rev 1 Dec. 1998 Features
• High forward current, Low capacitance. • Ultra small Flat .