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HSC945, HSC945_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HSC945, HSC945_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC945, HSC945_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
36.26 KB
Datasheet
HSC945_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC945, HSC945_Hi.
Please refer to the document for exact specifications by model.

HSC945 Product details

Description

The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 60 V VCEO Collector to Emitter Voltage 50 V VEBO Emitter to Base Voltage 5 V IC Collector Current 100

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC945-like datasheet

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