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2SJ541 - Silicon P-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance R DS(on) = 0.075Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ541 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 60 ±20.
  • 15.
  • 60.
  • 15 Unit V V A A A A mJ W °C °C Body-drain diode r.

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Datasheet Details

Part number 2SJ541
Manufacturer Hitachi Semiconductor
File Size 53.31 KB
Description Silicon P-Channel MOSFET
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Full PDF Text Transcription

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2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ541 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 50 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.
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