Part number:
2SC5702
Manufacturer:
Hitachi
File Size:
136.54 KB
Description:
Silicon npn transistor.
* High gain bandwidth product fT = 8 GHz typ.
* High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “ZS-”. Free Datasheet http://www.datasheet4u.com/ 2SC5702 Absolute Maxim
2SC5702
Hitachi
136.54 KB
Silicon npn transistor.
📁 Related Datasheet
2SC570 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS,
FEATURES . Complementary to 2SA490. • Remended for 10W High-Fidelity .
2SC5700 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
• High power gain low noise figure at low power o.
2SC5700 - Silicon NPN Transistor
(Renesas)
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Features
• High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF =.
2SC5702 - Silicon NPN Epitaxial Type Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SC5703 - NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5703
Unit.
2SC5704 - NPN SILICON RF TRANSISTOR
(CEL)
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
2SC5704-A - NPN SILICON RF TRANSISTOR
(CEL)
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
2SC5704-T3-A - NPN SILICON RF TRANSISTOR
(CEL)
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
