BB302C Datasheet - Hitachi

BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.

* Provide mini mold packages;

Datasheet Details

BB302C

Hitachi

58.22 KB

Build in biasing circuit mos fet ic uhf rf amplifier.

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