BB302M Datasheet - Hitachi

BB302M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.

* Provide mini mold packages;

Datasheet Details

BB302M

Hitachi

61.89 KB

Build in biasing circuit mos fet ic uhf rf amplifier.

BB302M Distributor

📁 Related Datasheet

📌 All Tags