BB304C Datasheet - Hitachi

BB304C Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain; (PG = 29 dB typ. at f = 200 MHz)

* Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)

* Wide supply voltage range; Applicable with 5V to 9V supply voltage.

* Withst

Datasheet Details

BB304C

Hitachi

67.89 KB

Build in biasing circuit mos fet ic uhf rf amplifier.

📁 Related Datasheet

BB304 Silicon Epitaxial Planar Dual Capacitance Diodes (Telefunken)

BB304A Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) (Siemens Group)

BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier (Hitachi)

BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier (Hitachi)

BB301M Build in Biasing Circuit MOS FET IC UHF RF Amplifier (Hitachi)

BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier (Hitachi)

TAGS

BB304C Distributor