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3SK309 - UHF RF Amplifier

3SK309 Description

3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd.Edition .

3SK309 Features

* Capable of low voltage operation (VDS = 1.5 to 3 V)
* Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
* High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK
* 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum

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Datasheet Details

Part number
3SK309
Manufacturer
Hitachi Semiconductor
File Size
59.99 KB
Datasheet
3SK309_HitachiSemiconductor.pdf
Description
UHF RF Amplifier

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UHF Amplifier Hitachi Semiconductor
Hitachi Semiconductor 3SK309-like datasheet