CS10N70FA9D Datasheet - Huajing Microelectronics

CS10N70FA9D Silicon N-Channel Power MOSFET

CS10N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 700 10 50 0.78 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS10N70FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R

CS10N70FA9D Datasheet (348.36 KB)