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CS6N60A8H

Silicon N-Channel Power MOSFET

CS6N60A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS6N60A8H General Description

CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 85 1.4 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS6N60A8H Datasheet (295.16 KB)

Preview of CS6N60A8H PDF

Datasheet Details

Part number:

CS6N60A8H

Manufacturer:

Huajing Microelectronics

File Size:

295.16 KB

Description:

Silicon n-channel power mosfet.

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CS6N60A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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