CS8N70FA9H2-G Datasheet (Huajing Microelectronics)

CS8N70FA9H2-G, Silicon N-Channel Power MOSFET

CS8N70F A9H2-G , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturizati

CS8N70FA9H2-G Features

* l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:35.9nC) l Low Reverse transfer capacitances(Typical:11.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa