CS8N70FA9H2-G Datasheet, Mosfet, Huajing Microelectronics

CS8N70FA9H2-G Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:35.9nC) l Low Reverse transfer capacitances(Typical:11.2pF) l 100% Single Pulse avalanche energy Test A

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CS8N70FA9H2-G

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS8N70F A9H2-G , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the con

CS8N70FA9H2-G Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS8N70FA9H2-G

Huajing Microelectronics

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