CS7N65A3TDY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N65A3TDY Datasheet Preview — Preview of CS7N65A3TDY PDF

Datasheet Details

Part number	CS7N65A3TDY
Manufacturer	Huajing Microelectronics
File Size	643.83 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS7N65A3TDY-HuajingDiscreteDevices.pdf

CS7N65A3TDY Product details

Description

CS7N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |