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HY5DU28822T, HY5DU28422T 2nd 128M DDR SDRAM

HY5DU28822T Description

HY5DU28422T HY5DU28822T HY5DU281622T 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 Rev.1.3 / Apr.2001 This doc.
and is subject to change without notice.

HY5DU28822T Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

HY5DU28822T Applications

* which requires large memory density and high bandwidth. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data stro

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This datasheet PDF includes multiple part numbers: HY5DU28822T, HY5DU28422T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY5DU28822T, HY5DU28422T
Manufacturer
Hynix Semiconductor
File Size
1.54 MB
Datasheet
HY5DU28422T-HynixSemiconductor.pdf
Description
2nd 128M DDR SDRAM
Note
This datasheet PDF includes multiple part numbers: HY5DU28822T, HY5DU28422T.
Please refer to the document for exact specifications by model.

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