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2SB1024 PNP Transistor

2SB1024 Description

isc Silicon PNP Darlington Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= -1. High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A). Compleme.

2SB1024 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB1024
Manufacturer
INCHANGE
File Size
207.27 KB
Datasheet
2SB1024-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB1024-like datasheet