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2SB1154 PNP Transistor

2SB1154 Description

isc Silicon PNP Power Transistor 2SB1154 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= -0.

2SB1154 Applications

* Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse

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Datasheet Details

Part number
2SB1154
Manufacturer
INCHANGE
File Size
219.02 KB
Datasheet
2SB1154-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1154-like datasheet