Datasheet4U Logo Datasheet4U.com

2SB1158 PNP Transistor

2SB1158 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

2SB1158 Applications

* Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-P

📥 Download Datasheet

Preview of 2SB1158 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1158
Manufacturer
INCHANGE
File Size
218.00 KB
Datasheet
2SB1158-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1150 - PNP Transistor (NEC)
  • 2SB1151 - PNP Transistor (SeCoS)
  • 2SB1152 - Silicon PNP Power Transistors (Inchange Semiconductor)
  • 2SB1153 - Silicon PNP Power Transistors (Inchange Semiconductor)
  • 2SB1154 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1155 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1156 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1157 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

INCHANGE 2SB1158-like datasheet