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2SB1160 PNP Transistor

2SB1160 Description

isc Silicon PNP Power Transistor 2SB1160 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

2SB1160 Applications

* Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-P

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Datasheet Details

Part number
2SB1160
Manufacturer
INCHANGE
File Size
218.17 KB
Datasheet
2SB1160-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1160-like datasheet