2SB1160 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB1160 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

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Datasheet Specifications

Part number: 2SB1160
Manufacturer: INCHANGE
File Size: 218.17 KB
Datasheet: 2SB1160-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-P

2SB1160 Distributors

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2SB1160 PNP Transistor INCHANGE

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