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2SB1163 PNP Transistor

2SB1163 Description

isc Silicon PNP Power Transistor 2SB1163 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

2SB1163 Applications

* Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-

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Datasheet Details

Part number
2SB1163
Manufacturer
INCHANGE
File Size
215.56 KB
Datasheet
2SB1163-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1163-like datasheet