2SB1258 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@IC= -3A. Complement to Type 2SD1785.

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Datasheet Specifications

Part number: 2SB1258
Manufacturer: INCHANGE
File Size: 204.26 KB
Datasheet: 2SB1258-INCHANGE.pdf
Description: PNP Transistor

Applications

* Driver for solenoid, relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -100 V -100 V -6 V IC Collector Current-Continuous ICP Col

2SB1258 Distributors

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2SB1258 PNP Transistor INCHANGE

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