Datasheet4U Logo Datasheet4U.com

2SB1258 PNP Transistor

2SB1258 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@IC= -3A. Complement to Type 2SD1785.

2SB1258 Applications

* Driver for solenoid, relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -100 V -100 V -6 V IC Collector Current-Continuous ICP Col

📥 Download Datasheet

Preview of 2SB1258 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1258
Manufacturer
INCHANGE
File Size
204.26 KB
Datasheet
2SB1258-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1252 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SB1253 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1254 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1255 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1257 - Silicon PNP Transistor (Sanken electric)
  • 2SB1259 - Silicon PNP Transistor (Sanken electric)
  • 2SB1201 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1202 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1258-like datasheet