2SB1286 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB1286 .
High DC Current Gain- :hFE = 1000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min). Low Collector-Emitter Satur.

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Datasheet Specifications

Part number: 2SB1286
Manufacturer: INCHANGE
File Size: 210.96 KB
Datasheet: 2SB1286-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

2SB1286 Distributors

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2SB1286 PNP Transistor INCHANGE

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