2SB1286 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB1286 PNP Transistor

isc Silicon PNP Darlington Power Transistor 2SB1286 .
High DC Current Gain- :hFE = 1000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min). Low Collector-Emitter Satur.

2SB1286-INCHANGE.pdf

2SB1286 Datasheet Preview — Preview of 2SB1286 PDF

Datasheet Details

Part number:

2SB1286

Manufacturer:

INCHANGE

File Size:

210.96 KB

Description:

PNP Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

2SB1286 Distributors

📁 Related Datasheet

2SB1282 2SB1283 2SB1284 2SB1285 2SB1288 2SB1201

📌 All Tags

2SB1286 PNP Transistor INCHANGE

INCHANGE 2SB1286-like datasheet