2SB1286 - PNP Transistor
*High DC Current Gain- :hFE = 1000(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) *Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A *Complement to Type 2SD1646 *Minimum Lot-to-Lot variations for robust device performance and rel
