Datasheet4U Logo Datasheet4U.com

2SB1286 - PNP Transistor

2SB1286 Description

isc Silicon PNP Darlington Power Transistor 2SB1286 .
High DC Current Gain- :hFE = 1000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min). Low Collector-Emitter Satur.

2SB1286 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of 2SB1286 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1286
Manufacturer
INCHANGE
File Size
210.96 KB
Datasheet
2SB1286-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1282 - Darlington Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SB1283 - Darlington Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SB1284 - Darlington Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SB1285 - Darlington Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SB1288 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SB1201 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1202 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1203 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1286-like datasheet

2SB1286 Stock/Price