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2SB1287 - PNP Transistor

2SB1287 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- :hFE = 1000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min). Low Collector-Emitter Satur.

2SB1287 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SB1287
Manufacturer
INCHANGE
File Size
211.21 KB
Datasheet
2SB1287-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1287-like datasheet

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