Datasheet4U Logo Datasheet4U.com

2SB1481 PNP Transistor

2SB1481 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1. Low Collector.

2SB1481 Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Conti

📥 Download Datasheet

Preview of 2SB1481 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1481
Manufacturer
INCHANGE
File Size
206.59 KB
Datasheet
2SB1481-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1488 - Silicon PNP triple diffusion planer type Transistor (Panasonic Semiconductor)
  • 2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1401 - Low frequency power amplifier (Hitachi)
  • 2SB1402 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1403 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1404 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1405 - PNP Epitaxial Silicon Transistor (Sanyo Semicon Device)
  • 2SB1406 - PNP Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1481-like datasheet