2SB550 Datasheet - INCHANGE

2SB550, PNP Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) *Low

Applications

* Designed for low frequency power amplifiers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Col

2SB550-INCHANGE.pdf