2SB550 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. With TO-66.

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Datasheet Specifications

Part number: 2SB550
Manufacturer: INCHANGE
File Size: 177.35 KB
Datasheet: 2SB550-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Col

2SB550 Distributors

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2SB550 PNP Transistor INCHANGE

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