2SB550
INCHANGE
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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) *Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@IC= -5A *With
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2SB550 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB550
DESCRIPTION ·With TO-66 package ·Low collect.
2SB551 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB551
DESCRIPTION ·With TO-66 package ·Low collect.
2SB551 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
2SB551
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation-
: P.
2SB552 - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE
HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLIC.
2SB552 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB552
DESCRIPTION ·With TO-3 package ·Complement t.
2SB552 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min) ·High Power Dissipation-
: PC= 150W(Max)@T.
2SB553 - SILICON PNP TRANSISTOR
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in .
2SB553 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB553
DESCRIPTION ·With TO-220C package ·Complemen.
2SB553 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 ·Minimum Lo.
2SB554 - PNP Transistor
(Toshiba)
:
SILICON PNP TRIPLE DIFFUSED TYPE
Unit in mm
POWER AMPLIFIER APPLICATIONS,
FEATURES
• High Power Dissipation • High Breakdown Voltage :
P c = 1.
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