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2SB550 PNP Transistor

2SB550 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB550 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1. With TO-66.

2SB550 Applications

* Designed for low frequency power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Col

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Datasheet Details

Part number
2SB550
Manufacturer
INCHANGE
File Size
177.35 KB
Datasheet
2SB550-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB550-like datasheet