2SB551 Datasheet - INCHANGE

2SB551, PNP Transistor

isc Silicon PNP Power Transistors 2SB551 DESCRIPTION *Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A *High Power Dissipat

Applications

* Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Diss

2SB551-INCHANGE.pdf