2SB554 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Power Dissipation- : PC= 150W@TC= 25℃. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Complement to Type 2SD424.

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Datasheet Specifications

Part number: 2SB554
Manufacturer: INCHANGE
File Size: 210.14 KB
Datasheet: 2SB554-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

2SB554 Distributors

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2SB554 PNP Transistor INCHANGE

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