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2SB554 PNP Transistor

2SB554 Description

isc Silicon PNP Power Transistor .
High Power Dissipation- : PC= 150W@TC= 25℃. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Complement to Type 2SD424.

2SB554 Applications

* Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

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Datasheet Details

Part number
2SB554
Manufacturer
INCHANGE
File Size
210.14 KB
Datasheet
2SB554-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB554-like datasheet