Datasheet4U Logo Datasheet4U.com

2SB556 PNP Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD426.

📥 Download Datasheet

Preview of 2SB556 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SB556
Manufacturer
INCHANGE
File Size
208.73 KB
Datasheet
2SB556-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltag

2SB556 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE 2SB556-like datasheet