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2SB556 PNP Transistor

2SB556 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD426.

2SB556 Applications

* Designed for power amplifier applications.
* Recommended for 80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltag

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Datasheet Details

Part number
2SB556
Manufacturer
INCHANGE
File Size
208.73 KB
Datasheet
2SB556-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB556-like datasheet