2SB558 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation- : PC= 60W(Max)@TC=25℃. Complement to Type 2SD428.

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Datasheet Specifications

Part number: 2SB558
Manufacturer: INCHANGE
File Size: 211.19 KB
Datasheet: 2SB558-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 40W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltag

2SB558 Distributors

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2SB558 PNP Transistor INCHANGE

INCHANGE 2SB558-like datasheet