Datasheet4U Logo Datasheet4U.com

2SB558 - PNP Transistor

📥 Download Datasheet

Preview of 2SB558 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SB558
Manufacturer INCHANGE
File Size 211.19 KB
Description PNP Transistor
Datasheet download datasheet 2SB558-INCHANGE.pdf

2SB558 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High Power Dissipation- : PC= 60W(Max)@TC=25℃ Complement to Type 2SD428 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 40W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emi

📁 2SB558 Similar Datasheet

  • 2SB550 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB551 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB552 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB553 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB554 - PNP Transistor (Toshiba)
  • 2SB555 - (2SB555 / 2SB556) SILICON POWER TRANSISTOR (SavantIC)
  • 2SB556 - (2SB555 / 2SB556) SILICON POWER TRANSISTOR (SavantIC)
  • 2SB559 - Epitaxial Planar Silicon Transistor (ETC)
Other Datasheets by INCHANGE
Published: |