Datasheet4U Logo Datasheet4U.com

2SC5763 NPN Transistor

2SC5763 Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC5763 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Fast Switching Speed. Wide Area of Safe Operation. 100% avalanche tested.

2SC5763 Applications

* Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak

📥 Download Datasheet

Preview of 2SC5763 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC5763
Manufacturer
INCHANGE
File Size
176.60 KB
Datasheet
2SC5763-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC5761 - NPN SiGe RF TRANSISTOR (NEC)
  • 2SC5764 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5765 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC570 - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC5700 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC5702 - Silicon NPN Epitaxial Type Transistor (Renesas)
  • 2SC5703 - NPN Transistor (Toshiba Semiconductor)
  • 2SC5704 - NPN SILICON RF TRANSISTOR (CEL)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC5763-like datasheet