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2SD1159 NPN Transistor

2SD1159 Description

isc Silicon NPN Power Transistor 2SD1159 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minim.

2SD1159 Applications

* Designed for TV horizontal deflection output, high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SD1159
Manufacturer
INCHANGE
File Size
203.66 KB
Datasheet
2SD1159-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1159-like datasheet