2SD1355 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 .
Low Collector Saturation Voltage : VCE(sat)= 2. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Complement t.

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Datasheet Specifications

Part number: 2SD1355
Manufacturer: INCHANGE
File Size: 200.38 KB
Datasheet: 2SD1355-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications.
* Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Co

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2SD1355 NPN Transistor INCHANGE

INCHANGE 2SD1355-like datasheet