Part number:
2SD1355
Manufacturer:
INCHANGE
File Size:
200.38 KB
Description:
Npn transistor.
2SD1355
INCHANGE
200.38 KB
Npn transistor.
📁 Related Datasheet
2SD1350 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q q q q q
Unit: mm
2.4±0.2 2.
2SD1350A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q q q q q
Unit: mm
2.4±0.2 2.
2SD1351 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1351
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Collector Power Dissipation-
: PC= .
2SD1351 - NPN Complementary Silicon Power Transistors
(Thinki Semiconductor)
2SD1351
®
2SD1351
Pb
Pb Free Plating Product
NPN Complementary Silicon Power Transistors
FEATURES
z Complements the 2SB988. z Wide Safe Operatio.
2SD1352 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB.
2SD1353 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD1353
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic.
2SD1354 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD1354
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=.
2SD1355 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN TRIPLE DIFFUSED TYPE
)
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Satura.
