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2SD1762 NPN Transistor

2SD1762 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min. Low Collector Saturation Voltage : VCE(sat)= 1. Complement t.

2SD1762 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Curren

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Datasheet Details

Part number
2SD1762
Manufacturer
INCHANGE
File Size
209.92 KB
Datasheet
2SD1762-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1762-like datasheet