2SD1762 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 2A *Complement to Type 2SB1185 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency po
