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2SD1772 NPN Transistor

2SD1772 Description

isc Silicon NPN Power Transistor .
High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min. Complement to Type 2SB1192. Minimum Lot-to-.

2SD1772 Applications

* Power amplifier applications.
* TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A

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Datasheet Details

Part number
2SD1772
Manufacturer
INCHANGE
File Size
210.95 KB
Datasheet
2SD1772-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1772-like datasheet