Datasheet4U Logo Datasheet4U.com

2SD1890 - NPN Transistor

2SD1890 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 5000(Min) @IC= 2A. Low Collector Saturation Voltga.

2SD1890 Applications

* For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipa

📥 Download Datasheet

Preview of 2SD1890 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SD1890
Manufacturer
INCHANGE
File Size
187.55 KB
Datasheet
2SD1890-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1892 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1893 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1894 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1895 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1896 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1898 - Power Transistor (GME)
  • 2SD1898-P - NPN Silicon Power Transistors (MCC)
  • 2SD1898-Q - NPN Silicon Power Transistors (MCC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1890-like datasheet