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2SD1890 - NPN Transistor

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Part number 2SD1890
Manufacturer INCHANGE
File Size 187.55 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 2A Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Em

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