2SD1896 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1896 .
Low Collector Saturation Voltage : VCE(sat)= 1. High Collector Power Dissipation. Good Linearity of hFE. Minimum Lot.

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Datasheet Specifications

Part number: 2SD1896
Manufacturer: Inchange Semiconductor
File Size: 209.55 KB
Datasheet: 2SD1896-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Curr

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2SD1896 Silicon NPN Power Transistor Inchange Semiconductor

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