2SD1891 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1891 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min). High DC Current Gain : hFE= 5000(Min) @IC= 3A. Low Collector Saturation Voltga.

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Datasheet Specifications

Part number: 2SD1891
Manufacturer: INCHANGE
File Size: 187.69 KB
Datasheet: 2SD1891-INCHANGE.pdf
Description: NPN Transistor

Applications

* For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak Collector Power Dissipa

2SD1891 Distributors

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2SD1891 NPN Transistor INCHANGE

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