2SD2155 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD2155 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Complement to Type.

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Datasheet Specifications

Part number: 2SD2155
Manufacturer: INCHANGE
File Size: 197.47 KB
Datasheet: 2SD2155-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5

2SD2155 Distributors

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2SD2155 NPN Transistor INCHANGE

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