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2SD686 NPN Transistor

2SD686 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). Low Collector-Emitter Satura.

2SD686 Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC C

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Datasheet Details

Part number
2SD686
Manufacturer
INCHANGE
File Size
206.78 KB
Datasheet
2SD686-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD686-like datasheet