Datasheet Details
Part number:
2SD855
Manufacturer:
INCHANGE
File Size:
208.65 KB
Description:
NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB760 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
