2SD859 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD859 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High Collector Power Dissipation. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: 2SD859
Manufacturer: INCHANGE
File Size: 208.18 KB
Datasheet: 2SD859-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Pea

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2SD859 NPN Transistor INCHANGE

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