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2SD858 Datasheet - INCHANGE

2SD858 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Good Linearity of hFE *High Collector Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF power amplifier applications. ABSOLUTE MAXIMUM R.

2SD858-INCHANGE.pdf

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Part number:

2SD858

Manufacturer:

INCHANGE

File Size:

217.17 KB

Description:

Silicon npn power transistor.

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