2SD858 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD858 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Good Linearity of hFE. High Collector Power Dissipation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SD858
Manufacturer: INCHANGE
File Size: 217.17 KB
Datasheet: 2SD858-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC

2SD858 Distributors

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2SD858 Silicon NPN Power Transistor INCHANGE

INCHANGE 2SD858-like datasheet