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2SD857 Datasheet - INCHANGE

2SD857 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB762 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier application.

2SD857-INCHANGE.pdf

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Datasheet Details

Part number:

2SD857

Manufacturer:

INCHANGE

File Size:

208.34 KB

Description:

Silicon npn power transistor.

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