3DD880 Datasheet - INCHANGE

3DD880, NPN Transistor

isc Silicon NPN Power Transistors DESCRIPTION *DC Current Gain -hFE = 60-300@ IC= 0.5A *Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100

Applications

* Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM

3DD880-INCHANGE.pdf