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3DD880

NPN Transistor

3DD880 General Description


*DC Current Gain -hFE = 60-300@ IC= 0.5A
*Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in general purpose amplifier and switching applications. ABSOLUTE.

3DD880 Datasheet (208.30 KB)

Preview of 3DD880 PDF

Datasheet Details

Part number:

3DD880

Manufacturer:

INCHANGE

File Size:

208.30 KB

Description:

Npn transistor.

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