Datasheet4U Logo Datasheet4U.com

3DD8C - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of 3DD8C PDF
datasheet Preview Page 2

Datasheet Details

Part number 3DD8C
Manufacturer Inchange Semiconductor
File Size 184.89 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 3DD8C-InchangeSemiconductor.pdf

3DD8C Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junction

📁 3DD8C Similar Datasheet

  • 3DD880 - NPN Transistor (INCHANGE)
  • 3DD880X - NPN Transistor (INCHANGE)
  • 3DD10 - NPN Silicon Low Frequency High Power Transistor (Shaanxi Qunli Electric)
  • 3DD100 - NPN Silicon Low Frequency High Power Transistor (Shaanxi Qunli Electric)
  • 3DD100A - NPN Transistor (INCHANGE)
  • 3DD100B - NPN Transistor (INCHANGE)
  • 3DD100C - NPN Transistor (INCHANGE)
  • 3DD100D - NPN Transistor (INCHANGE)
Other Datasheets by Inchange Semiconductor
Published: |